Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Weight  

3.949996g

Transistor Element Material  

SILICON

Turn Off Delay Time  

58 ns

Power Dissipation (Max)  

160W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

6V 10V

Current - Continuous Drain (Id) @ 25℃  

110A Tc

Published  

2007

Series  

HEXFET®, StrongIRFET™

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSSO-G2

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

Case Connection  

DRAIN

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5.1m Ω @ 65A, 10V

Vgs(th) (Max) @ Id  

3.7V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds  

4555pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

130nC @ 10V

Rise Time  

76ns

Vgs (Max)  

±20V

Fall Time (Typ)  

56 ns

Continuous Drain Current (ID)  

110A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free